Drive current and hot carrier reliability improvements of high-aspect-ratio n-channel fin-shaped field effect transistor with high-tensile contact etching stop layer

作者：Liao Wen Shiang; Wang Mu Chun; Hu Yongming; Chen Szu Hung; Chen Kun Ming; Liaw Yue Gie; Ye Cong; Wang Wenfeng; Zhou Di; Wang Hao^*; Gu Haoshuang

来源：Applied Physics Letters, 2011, 99(17): 173505.

DOI：10.1063/1.3657137

A high-aspect-ratio 3D multi-gate n-channel fin-shaped field effect transistor (FinFET) has been integrated with a stressor of a highly tensile nitride film as the initial inter layer dielectric capping layer upon a (110)-orientated silicon-on-insulator wafer. Drastically enhanced electrical performances, such as 190% enhancement of peak channel mobility, 91% of peak transconductance, and 34% of saturation current, etc., are achieved for an NMOS FinFET with a gate length of 90 nm. The I-off-I-on universal curve also demonstrates an extraordinary drive current gain of 26%. Moreover, the hot carrier injection lifetime can be increased from 7.78 X 10(2) to 5.26 X 10(3) year (yr) due to the incorporation of this high-tensile contact etching stop layer and relaxation of the Si crystalline channel layer.

• 出版日期2011-10-24
• 单位湖北大学