Modeling and characterization of hydrogen-induced charge loss in nitride-trapping memory

作者：Yang Yi Lin^*; Chang Chia Hua; Shih Yen Hao; Hsieh Kuang Yeu; Hwu Jenn Gwo

来源：IEEE Transactions on Electron Devices, 2007, 54(6): 1360-1365.

DOI：10.1109/TED.2007.895242

• flash memory
• hydrogen diffusion
• SONOS

This paper studies hydrogen diffusion, in nitridebased Flash memory. Distorted capacitance-voltage (C-V) curves were obtained when the programmed devices were baked in an environment of hydrogen at a temperature of 400 degrees C. Hydrogen may invade the edge of the device. The effectively trapped electrons were eliminated by the invading hydrogen. Elimination is responsible for a nonuniform distribution of charges in capacitors and contributes to the distortion of C-V curves. The distorted C-V curve can be accurately simulated by superposing only two subcapacitors with appropriate area ratios. The hydrogen-invasion depth can also be calculated from the ratio of the subcapacitances. The hydrogen diffusion length decreased as the number of programmed electrons increased. Hydrogen invasion is modeled as a diffusion-limited process.

• 出版日期2007-6
• 单位中国科学院电工研究所