SOI TFET I-ON/I-OFF Enhancement via Back Biasing

作者：Guo Alex^*; Matheu Peter; Liu Tsu Jae King

来源：IEEE Transactions on Electron Devices, 2011, 58(10): 3283-3285.

DOI：10.1109/TED.2011.2161480

• Back biasing
• tunnel field-effect transistor (TFET)
• ultra low power

The effect of back biasing on the performance of a planar tunnel field-effect transistor (TFET) implemented on a silicon-on-insulator substrate is investigated. It is found that reverse back biasing reduces the subthreshold swing SS and increases the range of drain current over which SS is less than (k(B)T/q)ln(10); hence, it is effective for improving the TFET ON/OFF current ratio for low operating voltages (<= 0.5 V).

• 出版日期2011-10