摘要

A double layered multiferroic thin film consisting of Bi0.89Tb0.11FeO3 (BTFO) and CoFe2O4 (CFO) layers has been deposited on a FTO/glass substrate by the chemical solution deposition method. The influence of magnetic layer on the crystal structure, dielectric, ferroelectric and magnetic properties of the double layered film was investigated. X-ray diffraction, Raman spectra and scanning electron microscope results demonstrate the perfect formation of double layered thin film structure without second phase. With the introduction CFO magnetic layer, the double layered film of dielectric constant shows strong frequency dependence, and the leakage current density and the multiferroic properties have been significantly improved. It is believed that at room temperature the superior multiferroic parameters (2P(r) similar to 218 mu C/cm(2) and 2M(r) similar to 100.9 emu/cm(3)) of the BTFO/CFO film are a major breakthrough in the double layered BFO-based films. The double layered film with excellent multiferroic properties become an attractive research focus in potential multifunctional devices.