摘要
High quality single-crystalline wurtzite indium nitride (InN) thin film was first demonstrated to have a Young's modulus of 149 +/- 5 GPa along a-axis using atomic force microscopy microbending test since the revision of InN energy gap. These released InN cantilever beams were examined to have ignorable in-plane residual stress using micro-Raman spectroscopy, where the E-2 (high) mode at 490 cm(-1) exists zero shift because of the perfect lattice match (8:9 commensurate) between InN and underneath aluminum nitride buffer. The experimental value of Young's modulus agrees well with a number of theoretical estimations ranging from 146 to 159 GPa.
- 出版日期2012-11-26
- 单位清华大学