AN EQUIVALENT CIRCUIT MODEL PROPOSED FOR THE INTERMEDIATE BAND NANOSTRUCTURED QUANTUM DOT SOLAR CELLS

作者：Houshmand Mohammad^*; Zandi Mohammad H; Dehkordi Somayeh S; Perez Mauricio D; Gorji Nima E

来源：Modern Physics Letters B, 2012, 26(21): 1250133.

DOI：10.1142/S0217984912501333

• Quantum dot
• intermediate band
• solar cell
• admittance spectrocopy
• equivalent circuit

The equivalent circuit of the p-i-n structure has been considered and developed for the quantum dot intermediate band solar cells where the nanoparticles are inserted in the active region of the diode. The admittance of the circuits are calculated consisting of frequency dependent capacitance and conductance. The presence of quantum dot layers in the active region of the diode increases the capacitance and conductance of the cell in lower frequencies. However, the number of QD cannot be increased and has an optimum.

• 出版日期2012-8-20