DEFINITION OF THE RADIATION DEMAGING FACTORS OF ACCELERATED ELECTRONS AND BREMSSTRAHLUNG ON SEMICONDUCTOR MATERIALS

作者：Maslov N I^*

来源：Problems of Atomic Science and Technology, 2010, (2): 168-172.

The formation of stable defects in irradiated materials depends not only on a concentration of primary radiation damages, but also from distribution them in a material volume. The distribution of primary radiation damages in a material volume is determined by energy of primary displaced atoms (PDA). Depending on value of the obtained energy T, PDA can create or insulated Frankel pair (steady or unstable), or cascade area of displacements. In silicon at development of the displacements cascade from PD. with energy >= 10 kappa(sic)B the large stable structural damaging is created called as disorder area. The disorder area renders essential influencing on physical properties of semiconductors. In the given activity the researches of silicon damaging by electrons and photons in a wide energy rang are presented and the method of definition of a damages percentage which are included in of cascade area of displacement was proposed.

• 出版日期2010