摘要

Europium-doped barium thioaluminate sputtering target was synthesized by powder sintering method and thin film was deposited by radio frequency (RF) sputtering. X-ray diffractometer (XRD) pattern indicated that the main compound of the target was BaAl(4)S(7). Oxygen was the main impurity which led to the formation of BaAl(2)O(4). It was shown that both BaAl(4)S(7) and BaAl(2)S(4) were contained in the as-grown thin films and a 471.7 nm emission peak in the PL spectra appeared due to a combination of BaAl(4)S(7):Eu(2+) and BaAl(2)S(4):Eu(2+). In addition, the product of oxidation in the film was BaSO(4) instead of BaAl(2)O(4) and led to an emission peak at 415.2 nm in the PL spectra assigned to the f -> f transition of Eu(2+) in the BaSO(4) host.