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摘要
In this work, a new electrochemical method for deposition of copper onto silicon wafers has been developed. The deposition approach involves two chemical systems separated by a silicon wafer. The deposition solution is typical, but on the opposite side of the wafer is an etching solution of hydrofluoric acid. The system successfully deposits copper. Electrochemical oxidation and chemical etching of the silicon substrate are shown to be integral steps in this process. Etch solution chemistry and applied potential are varied to optimize system performance and define system limitations.
- 出版日期2014
