Highly Photoconductive Si Film Formed by Blue Laser Diode Annealing for System on Panel

作者：Koswaththage C J^*; Nakao K; Okada T; Noguchi T

来源：Journal of Display Technology, 2016, 12(3): 247-251.

DOI：10.1109/JDT.2015.2463116

• Blue laser diode annealing (BLDA)
• silicon
• crystallization
• low-temperature polycrystalline silicon (LTPS)
• photoconductivity

Highly photosensitive Si film of new structure was successfully fabricated using semiconductor blue laser diode annealing (BLDA). By adopting back-reflection layer, simulation results show 86% increase of light absorption in red or IR region. Peaks from XRD results showed that Si film was crystallized clearly after BLDA in spite of the new back-reflection layer of Ti. All the process for photoconductive film was conducted using r.f. sputtering and vacuum evaporation without adopting CVD. After H-2 annealing, photoconductivity for the patterned Si films of 50 nm thickness increased remarkably up from 1.2 x 10(-4) to 3.2 x 10(-1) S/cm under white light of 100 mW/cm(2). Adopting back-reflection layer under the crystallized Si film using BLDA is promising to integrate functional photosensors with TFTs on panel.

• 出版日期2016-3