摘要

Nano-particle and defect have been proved to be effective in depressing the lattice thermal conductivity and improving the performance of thermoelectric materials. In this work, In0.5SnxCo4Sb12 were prepared using a high pressure and high temperature (HPHT) method, In and Sn was assumed that In plays the role of a filler and occupies the Sb-icosahedron voids. Doping of In and Sn results in the defects, nanostructuring, and mesoscale structuring were all combined into a single skutterudite matrix. The thermoelectric properties were measured in the temperature range of 321-710 K. As expected, with the synthetic pressures increased, the thermal conductivity of samples improved significantly. The minimum value of In0.5SnxCo4Sb12 synthesized at 3.8 GPa is 1.79 Wm(-1) K-1 and the highest Seebeck coefficient of sample In0.5SnxCo4Sb12 synthesized at 2.8 GPa reached 222 mu V K-1 finally.