科研之友
微信
新浪微博
Facebook
分享链接
摘要
Higher fracture probability, appearing in large format InSb infrared focal plane arrays detector under thermal shock loadings, limits its applicability and suitability for large format equipment, and has been an urgent problem to be solved. In order to understand the fracture mechanism and improve the reliability, three dimensional modeling and stress analysis of large format InSb detector is necessary. However, there are few reports on three dimensional modeling and simulation of large format InSb detector, due to huge meshing numbers and time-consuming operation to solve. To solve the problems, basing on the thermal mismatch displacement formula, an equivalent modeling method is proposed in this paper. With the proposed equivalent modeling method, employing the ANSYS software, three dimensional large format InSb detector is modeled, and the maximum Von Mises stress appearing in InSb chip dependent on array format is researched. According to the maximum Von Mises stress location shift and stress increasing tendency, the adaptability range of the proposed equivalent method is also derived, that is, for 16 x 16, 32 x 32 and 64 x 64 format, its adaptability ranges are not larger than 64 x 64, 256 x 256 and 1024 x 1024 format, respectively. Taking 1024 x 1024 InSb detector as an example, the Von Mises stress distribution appearing in InSb chip, Si readout integrated circuits and indium bump arrays are described, and the causes are discussed in detail. All these will provide a feasible research plan to identify the fracture origins of InSb chip and reduce fracture probability for large format InSb detector.
- 出版日期2013-9
- 单位河南大学
