A new approach to cell size scaling with a multi-dual cell and a buffer/background programming of unified RAM

作者：Bae Dong Il; Ryu Seong Wan; Gu Bonsang; Choi Yang Kyu^*

来源：Microelectronic Engineering, 2010, 87(2): 135-138.

DOI：10.1016/j.mee.2009.06.027

• Unified RAM (URAM)
• Multi-dual cell (MDC)
• Soft programming
• Background programming
• One-transistor (1T) capacitorless DRAM
• Non-volatile memory (NVM)

New investigations are presented here on a high-density and DRAM-like high-speed non-volatile memory (NVM) application of unified RAM (URAM). For a high-density application of URAM. multiple data storage is demonstrated with a multi-dual cell (MDC). Because each NVM state can be split by programming with a one-transistor (IT) DRAM without a capacitor, the total number of memory states can be doubled. Furthermore, a high-speed DRAM-level NVM scheme is proposed for the joint operation of IT DRAM buffer programming and NVM post-background programming. The MDC and the proposed scheme are unique URAM properties that can extend the application range of memory devices.

• 出版日期2010-2