An approach to temperature-insensitive band gap - The InGaGdN case

作者：Emura Shuichi^*; Mohd Tawil Siti Nooraya; Krishnamurthy Daivasigamani; Asahi Hajime

来源：Physica Status Solidi B-Basic Solid State Physics, 2012, 249(3): 489-493.

DOI：10.1002/pssb.201100336

• InGaGdN
• InGaN
• photoluminescence
• temperature insensitive luminescence

Quaternary alloys InGaGdN with In content of 23% and 14% (Gd approximate to 1% in both) are successfully grown with a sufficient quality to investigate the temperature behavior of photoluminescence (PL). A temperature-independent peak position is found for the sample with In content of 23%, while the sample with In content of 14% shows a weak temperature dependence. A theoretical model to explain the temperature dependence of the band gap of semiconductors is developed, where the inter-band mixing and the inner stress caused by the difference of the thermal expansion among the component alloys are taken into account.

• 出版日期2012-3