A Superjunction Schottky Barrier Diode With Trench Metal-Oxide-Semiconductor Structure

作者：Wang, Ying^*; Xu, Likun; Miao, Zhikun

来源：IEEE Electron Device Letters, 2012, 33(12): 1744-1746.

DOI：10.1109/LED.2012.2220117

• Leakage current
• reverse recovery
• Schottky barrier diode (SBD)
• softness factor
• superjunction (SJ)
• trench metal-oxide-semiconductor (MOS) structure

A superjunction Schottky barrier diode with trench metal-oxide-semiconductor (MOS) structure (TM-SJ-SBD) is proposed and studied by 2-D numerical simulations. The device shows the decreasing leakage current, as compared with the common superjunction Schottky barrier diode (SJ-SBD), without considerable degradation of forward characteristics. With optimized parameters, the TM-SJ-SBD attains a breakdown voltage of 178 V, which is similar to that of the SJ-SBD, and a leakage current of 1.57 x 10(-5) A/cm(2) at 130-V reverse bias, which is 46.5% smaller than that of the SJ-SBD. In addition, the TM-SJ-SBD achieves softer reverse recovery characteristics, and the reverse recovery peak current is 67.9% smaller than that of the SJ-SBD.

• 出版日期2012-12
• 单位哈尔滨工程大学