An Active Bi-Directional SiGe DPDT Switch With Multi-Octave Bandwidth

作者：Cho Moon Kyu^*; Song Ickhyun^*; Kim Jeong Geun^*; Cressler John D^*

来源：IEEE Microwave and Wireless Components Letters, 2016, 26(4): 279-281.

DOI：10.1109/LMWC.2016.2537055

• Active switch
• beam forming
• bi-directional amplifier
• cascode
• octave bandwidth
• phased array antenna
• SiGe
• silicon-germanium
• T/R chipset

This letter proposes a wideband active double-pole double-throw (DPDT) switch for wideband phased array antennas, which realizes multi-octave bandwidth with positive gain and 4-way switching operation using a bi-directional distributed amplifier technique. Themeasured gain is 2.0-6.0 dB and the input and output return losses are better than 9 dB from 2-22 GHz. The isolation is over 15 dB and the measured input P1dB is greater than -9.1 dBm and the output P1dB is greater than -7.8 dBm from 2-22 GHz. The chip size is 1.07 x 0.98 mm(2), including pads. The switch consumes 10 mA from a 2.5 V supply. Almost identical RF performance is achieved in each of the 4-way switching operations due to a symmetric circuit topology and careful layout. To the authors' knowledge, this is the first demonstration of the active DPDT switch configuration.

• 出版日期2016-4