Dual color longwave InAs/GaSb type-II strained layer superlattice detectors

作者：Plis E^*; Myers S; Ramirez D; Smith E P; Rhiger D; Chen C; Phillips J D; Krishna S

来源：Infrared Physics & Technology, 2015, 70: 93-98.

DOI：10.1016/j.infrared.2014.09.027

• Molecular beam epitaxy
• Infrared detectors
• Super lattice
• pBp detector
• Dual-band detector

We report on the design, growth, fabrication and characterization of dual-band (long-/long-wave infrared) type-II InAs/GaSb strained layer superlattice (T2SL) detectors with pBp architecture. Under operating the bias of -200 mV and +100 mV, quantum efficiencies of 37% (similar to 11 mu m band) and 25% (similar to 9 mu m band) were realized, respectively. To reduce the dark current in a dual-band T2SL detector, the effect of a "restoration" chemical etch treatment and ZnTe passivation on device performance were investigated.

• 出版日期2015-5