摘要

Commercial markets desire integrated multifrequency band-select duplexer and diplexer filters with a wide fractional bandwidth and steep roll-off to satisfy the ever-increasing demand for spectrum. In this paper, we discuss the fabrication and design of lithium niobate (LN) thin-film S-0 Lamb-wave resonators on a piezoelectric-on-piezoelectric platform. Filters using these resonators have the potential to fulfill all the above requirements. In particular, we demonstrated one-port high-order S0 Lamb-wave resonators with resonant frequencies from similar to 400 MHz to similar to 1 GHz on a black rotated y-136 cut LN thin film. The effective electromechanical coupling factor (k(eff)(2)) ranges from 7% to 12%, while the measured quality factor ranges from 600 to 3300. The highest k(eff)(2) x Q achieved on this chip is 194, significantly surpassing contour mode resonators manufactured in other technologies.

  • 出版日期2015-4