A novel CdCl2 treatment for glass/SnO2/CBD-CdS/CdTe solar cell

作者：Ghosh B; Ghosh D; Hussain S; Amarendra G; Chakraborty B R; Dalai M K; Sehgal G; Bhar R; Pal A K^*

来源：Materials Science in Semiconductor Processing, 2014, 24: 74-82.

DOI：10.1016/j.mssp.2014.03.005

• II-VI semiconductor
• Grain growth
• SIMS
• PV

Residual CdCl2 in chemical bath deposited (CBD) CdS layer was utilized to observe grain growth in CdTe layer for glass/SnO2/CBD-CdS/CdTe structures. The above as-deposited composite films were subjected to rapid thermal annealing (RTA) for observing grain growth and subsequent cell fabrication. The films were characterized by studying their microstructural and compositional properties. Interfacial mixing behavior was studied by secondary ion mass spectroscopy (SIMS) measurements which showed a slight interfacial diffusion of the CdS layer into the CdTe layer. Performance of a photovoltaic (PV) cell structure with non-optimized thickness of the CdTe and CdS layers obtained by this technique was studied. Carrier life time was obtained from V-oc decay measurement. Photoinduced charge separation observed in this glass/SnO2/CBD-CdS/CdTe structure was associated with an increase in the dielectric constant and a decrease in the device resistance.

• 出版日期2014-8