A Method and Case Study on Identifying Physically Adjacent Multiple-Cell Upsets Using 28-nm, Interleaved and SECDED-Protected Arrays

作者：Wirthlin Michael^*; Lee David; Swift Gary; Quinn Heather

来源：IEEE Transactions on Nuclear Science, 2014, 61(6): 3080-3087.

DOI：10.1109/TNS.2014.2366913

• Field programmable gate arrays (FPGAs)
• multiple-bit upset
• reconfiguration
• soft errors
• single event effect (SEE)
• testing techniques

Extracting information about MCUs from SEU data sets can be a challenge without physical layout information. Many modern static-random access memory (SRAM) components interleave memory cells to improve the robustness of error-correcting codes (ECC) that detect and correct errors in the memory array. Bit interleaving has also become popular with other components with large SRAM arrays, including field-programmable gate arrays (FPGAs). In this paper, we present a technique for extracting MCUs statistically from radiation test data. Further, we use this technique to extract MCU information from a 28-nm FPGA that uses interleaving to protect the configuration memory.

• 出版日期2014-12