Post-annealing effects on ZnS thin films grown by using the CBD method

作者：Ahn Heejin; Um Youngho^*

来源：Journal of the Korean Physical Society, 2015, 67(6): 1045-1050.

DOI：10.3938/jkps.67.1045

• Chemical bath deposition
• CIGS buffer layer
• ZnS
• Annealing effect
• XPS

Herein, the structural, morphological, and optical properties of zinc sulfide (ZnS) thin films deposited via the chemical bath deposition method are reported. These films were deposited on soda-lime glass (SLG) substrates by using ZnSO4, thiourea, and 25% ammonia at 90 A degrees C. The effect of changing the annealing temperature from 100 A degrees C to 300 A degrees C on the properties of the ZnS thin films was investigated. X-ray diffraction (XRD) patterns showed that the ZnS thin film annealed at 100 A degrees C had an amorphous structure; however, as the annealing temperature was increased, the crystalline quality of the thin film was enhanced. Moreover, transmission measurements showed that the optical transmittance was about 80% for wavelengths above 500 nm. The band gap energy (E (g) ) value of the film annealed at 300 A degrees C was decreased to about 3.82 eV.

• 出版日期2015-9