Analog memory capacitor based on field-configurable ion-doped polymers

作者：Lai Qianxi^*; Zhang Lei; Li Zhiyong; Stickle William F; Williams R Stanley; Chen Yong

来源：Applied Physics Letters, 2009, 95(21): 213503.

DOI：10.1063/1.3268433

• analogue circuits
• analogue storage
• capacitors
• conducting polymers
• doping profiles
• electric field effects

A memory capacitor based on a field-configurable ion-doped polymer is reported. The device can be dynamically and reversibly programed to analog capacitances with low-voltage (< 5 V) pulses. After the device is programed to a specific value, its capacitance remains nonvolatile. The field-configurable capacitance is attributed to the modification of ionic dopant concentrations in the polymer. The memory capacitors might be used for analog memory, nonlinear analog, and neuromorphic circuits.

• 出版日期2009-11-23