A key issue of organic light-emitting diodes: Enhancing hole injection by interface modifying

作者：Song Dandan; Zhao Suling; Zhang Fujun^*; Xu Zheng; Li Junming; Yue Xin; Zhu Haina; Lu Lifang; Wang Yongsheng

来源：Journal of Luminescence, 2009, 129(12): 1978-1980.

DOI：10.1016/j.jlumin.2009.04.074

• Hole injection
• Fullerene
• Carrier balance

To enhance hole injection, fullerene was used to modify indium tin oxide (ITO)-coated substrate because of its strong electron-accepting ability. The optical power of in (8-hydroxyquinoline) aluminum (Alq(3))-based organic light-emitting diodes (OLEDs) was increased by 3 5 times when the 3 nm thickness fullerene was pre-coated on ITO compared with that of the bare ITO anode under the same driving voltage (20 V). The cause for the enhancement was ascribed to the formation of electron-abundant layer that as a result of electron transfer from Alq(3) layer to C(60) at the ITO/C(60) interface. it was shown that the electron-abundant layer played dual roles in the enhancement of device performance. On the one hand, a thin layer C(60) is convenient for hole injection and electron blocking, which resulted in the balance of charge carriers. On the other hand, when C(60) layer is thicker than 3 nm, the hole transport will be reduced due to its low hole mobility and the device performance was impaired.

• 出版日期2009-12
• 单位北京交通大学