摘要

We reported first photodetectors based on a CH(3)NH(3)Pbl(3)/GaN heterojunction with or without an electron transport layer (ETL). Through the investigation, the device without an ETL showed good sensitivity, high stability, and repeatability. Particularly, when C-60 was applied as the ETL, the device showed a. self-powered characteristic with high stability. The best self-powered device with 6 nm C-60 displayed an on/off ratio of greater than 5000, peak responsivity of 0.198 A/W, and detectivity Of 7.96 x 10(12) cm Hz(1-/2)/W, which is comparable with the other reports. The high performance mentioned above was attributed mainly to the C-60 layer, which can reduce the density of trap states and passivate the grain boundaries of the CH(3)NH(3)Pbl(3) absorbing layer to facilitate intermolecular charge transport.