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摘要
A mono- to multilayer thick MoS2 film has been grown by using the atomic layer deposition (ALD) technique at 300 degrees C on a sapphire wafer. ALD provides precise control of the MoS2 film thickness due to pulsed introduction of the reactants and self-limiting reactions of MoCl5 and H2S. A post-deposition annealing of the ALD-deposited monolayer film improves the crystallinity of the film, which is evident from the presence of triangle-shaped crystals that exhibit strong photoluminescence in the visible range.
- 出版日期2014
