A method for extraction of electron mobility in power HEMTs

作者：Arninbeidokhti Amirhossein^*; Dimitrijev Sima; Han Jisheng; Xu Xiangang; Wang Chengxin; Qu Shuang; Moghadam Hamid Amini; Tanner Philip; Massoubre David; Walker Glenn

来源：Superlattices and Microstructures, 2015, 85: 543-550.

DOI：10.1016/j.spmi.2015.05.036

• Power high-electron-mobility transistor (HEMT)
• Two-dimensional electron gas (2DEG) mobility
• Mobility extraction method

In this paper, a novel method for extraction of electron mobility in the two-dimensional electron gas (2DEG) under the gate of power HEMTs is presented. Using this method enables the potential impact of the gate metal and the gate voltage on electron mobility in the 2DEG under the gate to be measured without the error due to the resistive regions outside the gate, which are the gate-to-source and gate-to-drain regions. The application of the new method was demonstrated by measurements on fabricated circular HEMTs.

• 出版日期2015-9
• 单位山东大学