Analysis of GaN HEMTs Switching Transients Using Compact Model

作者：Faramehr Soroush^*; Igic Petar

来源：IEEE Transactions on Electron Devices, 2017, 64(7): 2900-2905.

DOI：10.1109/TED.2017.2703103

• Compact model
• current collapse (CC)
• double-pulse switch
• drain-lag
• GaN HEMTs
• gate-lag
• switching transients
• technology computer-aided design (TCAD)

This paper presents a methodology to model GaN power HEMT switching transients. Thus, a compact model to predict devices' pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching tester to model intrinsic parasitic effects and to analyze power dissipation of GaN power HEMT are proposed and presented. Switching transient including gate-lag and drain-lag is predicted for ideal (without trap) and nonideal (with trap) devices. The results are validated by and compared to 2-D finite-element technology computer-aided design simulations. The original aim of this exercise is to develop a fast (near-real-time) model which can predict dynamic behavior of single and multiple power GaN HEMTs used for the switching transients of GaN power devices at circuit level.

• 出版日期2017-7