Low-Temperature Annealing of n-Type beta-FeSi2/p-Type Si Heterojunctions

作者：Shaban Mahmoud^*; Nomoto Keita; Nakashima Kazuhiro; Yoshitake Tsuyoshi

来源：Japanese Journal of Applied Physics, 2008, 47(5): 3444-3446.

DOI：10.1143/JJAP.47.3444

• iron disilicide
• photovoltaics
• thin film
• heterojunction
• annealing

beta-FeSi2 thin films epitaxially grown on Si(I 11) were annealed in vacuum at different annealing temperatures. The effects of low-temperature postannealing on the photovoltaic properties of beta-FeSi2/Si heterojunctions were investigated. The heterojunctions annealed at 300 degrees C exhibited an apparent improvement in photovoltaic performance as compared with as grown heterojunctions. This improvement may be due to Fe atoms, that diffused into the Si substrate during beta-FeSi2 film deposition, were gettered by the postannealing process. [DOI: 10.1143/JJAP.47.3444]

• 出版日期2008-5