A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs

作者：Bellone Salvatore^*; Di Benedetto Luigi; Licciardo Gian Domenico

来源：IEEE Transactions on Electron Devices, 2012, 59(9): 2546-2549.

DOI：10.1109/TED.2012.2203601

• Bipolar mode field effect transistors (BMFETs)
• bipolar static induction transistors (BSITs)
• junction field-effect transistors (JFETs)
• semiconductor device modeling
• 4H polytype of silicon carbide (4H-SiC)

An original model of the potential barrier in the channel of bipolar static induction transistors (BSITs) is presented. The model allows us to evaluate the potential barrier height for an arbitrary gate topology and to accurately predict the minority and majority carrier densities at the middle of the channel for a generic gate bias. The validity of the model is verified by comparison with numerical simulations of BSIT structures reported by other authors and with original simulations carried out on silicon (Si) and silicon carbide (SiC) junction field-effect transistors.

• 出版日期2012-9