Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices

作者：Fujiwara Kosuke^*; Oogane Mikihiko; Yokota Saeko; Nishikawa Takuo; Naganuma Hiroshi; Ando Yasuo

来源：Journal of Applied Physics, 2012, 111(7): 07C710.

DOI：10.1063/1.3677266

Magnetic tunnel junctions with a Ni80Fe20/Ru/Co40Fe40B20 synthetic antiferro-coupled bottom free layer and an MgO barrier layer have been fabricated. Double annealing process was carried out in order to obtain linearity against magnetic field with hysteresis-free resistance response. The effect of the annealing temperature and NiFe thickness in the free layer on the magnetic field sensor performance was investigated. We have observed a very high sensitivity of 25.3%/Oe while keeping linearity.

• 出版日期2012-4-1