High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate

作者：Tang Shih Hsuan; Chang Edward Yi^*; Hudait Mantu; Maa Jer Shen; Liu Chee Wee; Luo Guang Li; Trinh Hai Dang; Su Yung Hsuan

来源：Applied Physics Letters, 2011, 98(16): 161905.

DOI：10.1063/1.3580605

High-quality epitaxial Ge films were grown on GaAs substrates by ultrahigh vacuum chemical vapor deposition. High crystallinity and smooth surface were observed for these films by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Direct band gap emission (1550 nm) from this structure was detected by photoluminescence. Valence band offset of 0.16 eV at the Ge/GaAs interface was measured by x-ray photoelectron spectroscopy. N-type arsenic self-doping of 10(18)/cm(-3) in the grown Ge layers was determined using electrochemical capacitance voltage measurement. This structure can be used to fabricate p-channel metal-oxide-semiconductor field-effect transistor for the integration of Ge p-channel device with GaAs n-channel electronic device.

• 出版日期2011-4-18
• 单位美国弗吉尼亚理工大学(Virginia Tech)