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摘要
The preparation of polyaramide thin films on silicon wafers via stepwise layer buildup is described. Hydroxy- and amine-functionalized silicon wafers are reacted in step-and-repeat processes with aromatic dichlorides and diamines, which leads to a stepwise formation of a surface-attached polyamide layer. In the case of aromatic diamines and terephtaloyl dichloride the generation of an up to 115 nm thick polyaramide layer is described while the corresponding aliphatic compounds yield only very thin films. FTIR, ellipsometric measurements and atomic force microscopy (AFM) show a linear growth of the polyaramide layers for more than a thousand reaction cycles. The mechanism of the monomer-by-monomer layer formation process and the structure of the formed films are elucidated.
- 出版日期2010-11-9
