Heavy-Ion and Laser Induced Charge Collection in SiGe Channel pMOSFETs

作者：Zhang En Xia^*; Samsel Isaak K; Hooten Nicholas C; Bennett William G; Funkhouser Erik D; Ni Kai; Ball Dennis R; McCurdy Michael W; Fleetwood Daniel M; Reed Robert A; Alles Michael L; Schrimpf Ronald D; Linten Dimitri; Mitard Jerome

来源：IEEE Transactions on Nuclear Science, 2014, 61(6): 3187-3192.

DOI：10.1109/TNS.2014.2357440

• Heavy ion strike
• laser
• polarity
• siGe pMOSFETs
• single-event-transient

Heavy-ion and two-photon-absorption (TPA) experiments have been performed on ultra-thin implant-free quantum well SiGe channel pMOSFETs. Both the single-event-transient pulse magnitude and polarity can depend strongly on the location of the strike along the device channel. The polarity inversion occurs primarily because very limited transient charge collection occurs below the quantum well, as confirmed by two-dimensional TCAD simulation.

• 出版日期2014-12