Assessment of dielectric charging in capacitive MEMS switches fabricated on Si substrate with thin oxide film

作者：Birmpiliotis D^*; Czarnecki P; Koutsoureli M; Papaioannou G; De Wolf I

来源：Microelectronic Engineering, 2016, 159: 209-214.

DOI：10.1016/j.mee.2016.04.008

• RF-MEMS capacitive switches
• Dielectric charging
• Substrate charging
• Aluminum nitride

The paper presents a new method to determine and monitor the surface charge density of dielectric film in capacitive MEMS switches which experience a significant interference from substrate parasitic MOS capacitors coupling. The method is based on the analysis of composite MEMS device and bridge-less back-to-back substrate MOS capacitors. The difference of the derivatives of the two device C-V characteristics allows the calculation of dielectric film charge density. The method has been applied to monitor the charging build-up during device stress.

• 出版日期2016-6-15