科研之友
微信
新浪微博
Facebook
分享链接
摘要
High-current vertically structured diamond Schottky barrier diodes (SBDs) with a thick field plate and a doping-controlled drift layer were fabricated. The fabricated vertical SBD (VSBD) realized forward currents and blocking voltages of more than 1A and 300V at 250 degrees C. The VSBD was mounted on a metal-ceramic package with a gold bonding wire and a high-temperature resistive resin. The switching behavior of the packaged diamond VSBD was characterized by a double-pulse method at elevated temperatures. The device showed a short turn-off time with a low switching charge of less than 5 nC, which remained almost constant even at 250 degrees C.
- 出版日期2014-5
