Ni silicide formation on epitaxial Si1-yCy/(001) layers

作者：Lee S W^*; Huang S H; Cheng S L; Chen P S; Wu W W

来源：Thin Solid Films, 2010, 518(24): 7394-7397.

DOI：10.1016/j.tsf.2010.05.015

• Silicide
• Sheet resistance
• Thermal stability

The formation of Ni silicides on Si1 - yCy (y=0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si0.982C0.018 samples, the process window of NiSi was shifted and extended to 450-700 degrees C. Moreover, there was an additional strain introduced into the Si1 - yCy epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si1yCy for device applications.

• 出版日期2010-10-1
• 单位中央民族大学