Analysis of Li-related defects in ZnO thin films influenced by annealing ambient

作者：Wang Bing^*; Tang Lidan

来源：Bulletin of Materials Science, 2014, 37(1): 35-39.

DOI：10.1007/s12034-014-0619-8

• ZnO
• thin films
• radio frequency magnetron sputtering

Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and in situ annealing under O-2 or Ar ambient. Li-related defects in ZnO films strongly depend on the annealing ambient. AFM and XRD indicated that ZnO films possessed a good crystallinity with c-axis orientation, uniform thickness and dense surface. Electrical and optical properties demonstrated that, an amount of Li-Zn defect had existed in ZnO annealed under O-2 ambient and an amount of Li-i(0) defect had existed in ZnO annealed under Ar ambient. First-principle calculations were performed to calculate formation energies of Li-doped ZnO in order to explain the formation mechanism of Li-related defects in ZnO.

• 出版日期2014-2
• 单位辽宁工业大学