Ultraviolet Photodetector Fabricated From Multiwalled Carbon Nanotubes/Zinc-Oxide Nanowires/p-GaN Composite Structure

作者：Shao Dali^*; Yu Mingpeng; Lian Jie; Sawyer Shayla M L

来源：IEEE Electron Device Letters, 2013, 34(9): 1169-1171.

DOI：10.1109/LED.2013.2273351

• Gallium nitride (GaN)
• heterojunction
• ultraviolet photodetector
• zinc oxide (ZnO) nanowires

An ultraviolet (UV) heterojunction photodetector was fabricated from multiwalled carbon nanotubes (MWCNTs)/zinc-oxide nanowires (NWs)/p-GaN composite structure. The photodetector demonstrated significant rectifying characteristics and relative fast transient response with response time on the order of milliseconds. Under back illumination, the photodetector exhibited a narrow bandpass photoresponse spectrum (13-nm full-width at half-maximum) centered at 375 nm with a maximum responsivity of 6 mA/W. The good performance of this heterojunction photodetector is attributed to improved carrier transport and collection efficiency through the MWCNTs network deposited on top of the ZnO NWs.

• 出版日期2013-9