Atomic layer deposition of sodium and potassium oxides: evaluation of precursors and deposition of thin films

作者:Ostreng E; Sonsteby H H*; Oien S; Nilsen O; Fjellvag H
来源:Dalton Transactions, 2014, 43(44): 16666-16672.
DOI:10.1039/c4dt01930j

摘要

Thin films of sodium and potassium oxides have for the first time been deposited using atomic layer deposition. Sodium and potassium complexes of tert-butanol, trimethylsilanol and hexamethyldisilazide have been evaluated as precursors by characterising their thermal properties as well as tested in applications for thin film depositions. Out of these, sodium and potassium tert-butoxide and sodium trimethylsilanolate and hexamethyldisilazide were further tested as precursors together with the Al(CH3)(3) + H2O/O-3 process to form aluminates and together with ozone to form silicates. Sodium and potassium tert-butoxide and sodium trimethylsilanolate showed self-limiting growth and proved useable at deposition temperatures from 225 to 375 or 300 degrees C, respectively. The crystal structures of (NaOBu)-Bu-t and (KOBu)-Bu-t were determined by single crystal diffraction revealing hexamer- and tetramer structures, respectively. The current work demonstrates the suitability of the ALD technique to deposit thin films containing alkaline elements even at 8'' wafer scale.

  • 出版日期2014