Bistable defects in low-energy electron irradiated n-type 4H-SiC

作者：Beyer F C^*; Hemmingsson C G; Pedersen H; Henry A; Isoya J; Morishita N; Ohshima T; Janzen E

来源：Physica Status Solidi-Rapid Research Letters, 2010, 4(8-9): 227-229.

DOI：10.1002/pssr.201004249

• crystal microstructure
• vacancies
• defects
• radiation effects
• semiconductors

Epitaxial n-type 4H-SiC layers were irradiated at room temperature by low-energy electrons. During the annihilation process of the irradiation induced defects EH I and EH3, three new bistable centers, labeled EB centers, were detected in the DLTS spectrum. The reconfigurations of the EB centers (I -> II and II -> I) take place at room temperature with a thermal reconfiguration energy of about 0.95 eV. The threshold energy for moving the Si atom from its site in the SiC crystal structure is higher than the applied irradiation energy; therefore, the EB centers are attributed to carbon related complex defects.

• 出版日期2010-9