摘要
The Bi3SbO7 ceramic was prepared by the solid state reaction method and its phase evolution at different temperatures was studied. Low temperature phase alpha-Bi3SbO7 was formed at about 890 degrees C and it started to transform to high temperature phase beta-Bi3SbO7 at about 960 degrees C. Microwave dielectric constants of alpha-Bi3SbO7 ceramic and beta-Bi3SbO7 ceramic were 43.2 and 37.6, Qf value were 2080 and 5080 GHz, respectively. TCF of alpha-Bi3SbO7 ceramic was near zero and TCF of beta-Bi3SbO7 ceramic was about -120 ppm/degrees C. The Bi3SbO7 ceramic is a promising candidate for low temperature co-fired ceramic (LTCC) technology due to its large dielectric constant, low dielectric loss at microwave region, low sintering temperature and simple composition.