Analytical, Numerical-, and Measurement-Based Methods for Extracting the Electrical Parameters of Through Silicon Vias (TSVs)

作者：Ndip Ivan^*; Zoschke Kai; Loebbicke Kai; Wolf M Juergen; Guttowski Stephan; Reichl Herbert; Lang Klaus Dieter; Henke Heino

来源：IEEE Transactions on Components, Packaging and Manufacturing Technology, 2014, 4(3): 504-515.

DOI：10.1109/TCPMT.2013.2279688

• Analytical, numerical-, and measurement-based methods
• RLCG parameters
• through-silicon via (TSV)

In this paper, analytical, numerical-, and measurement-based methods for extracting the resistance, inductance, capacitance, and conductance of through silicon vias (TSVs) are classified, quantified, and compared from 100 MHz to 100 GHz. An in-depth analysis of the assumptions behind these methods is made, from which their limits of accuracy/validity are defined. Based on this, the most reliable methods within the studied frequency range are proposed. The TSVs are designed, fabricated, and measured. Very good correlation is obtained between electrical parameters of the TSVs extracted from the measurements and electromagnetic field simulations.

• 出版日期2014-3