Anisotropic Magnetoresistance Effect in Co-2(Fe-Mn)(Al-Si) Heusler Alloy Thin Film

作者：Yako Hitomi^*; Kubota Takahide; Takanashi Koki

来源：IEEE Transactions on Magnetics, 2015, 51(11): 2600403.

DOI：10.1109/TMAG.2015.2439284

• Terms-Anisotropic magnetoresistance (AMR) effect
• half-metal
• Heusler alloy

The anisotropic magnetoresistance (AMR) effect was investigated in epitaxially grown cobalt-based Heusler thin films of Co-2(Fe-Mn) Si, Co-2(Fe-Mn)(Al-Si) (CFMAS), and Co-2(Fe-Mn)Al. Films were successfully fabricated onto MgO (100) single crystal substrate with an L2(1) ordering. The signs of the AMR ratio were negative for all the samples in this paper, which implies a possibility of half-metallic electronic structure. The maximum value of AMR ratio for the CFMAS film was -0.19% at 10 K, which is comparable with the earlier works on half-metallic Heusler alloys thin films. Our results propose that the CFMAS is also a good candidate for the spintronic devices, such as giant MR junctions.

• 出版日期2015-11