Arylene bisimides with triarylamine N-substituents as new solution processable organic semiconductors: Synthesis, spectroscopic, electrochemical and electronic properties

作者：Rybakiewicz Renata; Djurado David; Cybulski Hubert; Dobrzynska Ewelina; Kulszewicz Bajer Irena; Boudinet Damien; Verilhac Jean Marie; Zagorska Malgorzata^*; Pron Adam

来源：Synthetic Metals, 2011, 161(15-16): 1600-1610.

DOI：10.1016/j.synthmet.2011.05.025

• Arylene bisimides
• Triarylamine derivatives
• Low band semiconductors
• Organic transistors
• DFT calculations

New solution processable organic semiconductors, consisting of pyrromelitic, naphthalene or perylene bisimide core and triarylamine N-substituents, have been synthesized. All three compounds are electrochemically active and undergo quasi-reversible oxidation and reduction as evidenced by cyclic voltammetry investigations. The oxidation process involves the transformation of the triarylamine substituents into radical cations as proven spectroscopically and spectroelectrochemically. The reduction process occurs at the arylene bisimide core leading to the formation of a radical anion and eventually a dianion in the second step. These findings are in perfect agreement with the DFT calculations which show that in the synthesized molecules the HOMO orbital is located on the triarylamine moiety whereas the LUMO one on the bisimide core. In all molecules studied the electrochemically determined ionization potential (IP) is slightly higher than 5.0 eV whereas in naphthalene and perylene derivatives the electron affinity (EA) is close to -3.9 eV. These values fulfill the requirements for n-type (electron) semiconductors in air operating n-channel field effect transistors (FETs) as well as for p-type (hole) conductors in p-channel FETs. To verify whether the newly synthesized compounds exhibit the expected electrical transport properties all organic (CYTOP dielectric) test transistors were fabricated. All three semiconductors showed no field effect in the n-channel configuration. To the contrary, they could be used in p-channel FETs showing, in the saturation regime, the hole mobility approaching 10(-4) cm(2) V(-1) s(-1) - the value which slightly exceeds that measured for low molecular weight, amorphous triarylamine semiconductors.

• 出版日期2011-8
• 单位中国地震局