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摘要
In this paper, we have simulated some neuron MOS analogue and digital integrated circuits by the proposed macromodels of neuron MOS transistor and complementary neuron MOS used in SPICE-based computer simulators. Both models take into account all the geometrical and electrical parameters of the studied device structure, and they are applicable to DC and transient simulations. Simulation results are presented and compared with recent experimental data.
- 出版日期2000-5
- 单位上海交通大学
