Promising Solution Processed Lanthanide Films as High-k Gate Insulators for Low Voltage-Driven Oxide Thin Film Transistors

作者：Choi Sungho^*; Park Byung Yoon; Jeong Sunho; Jung Ha Kyun

来源：Electrochemical and Solid-State Letters, 2011, 14(10): H426-H429.

DOI：10.1149/1.3617445

Low power-operated oxide thin film transistors (TFTs) were successfully obtained using high-k lanthanides produced via a simple solution process. Sol-gel derived high-k thin films exhibit the dielectric constant in the range of 11-15 with breakdown field as high as 3.5 MV cm(-1). Among the representative lanthinides, the Gd-based oxide acts as an effective gate insulator operating the TFTs properly. It might be induced by the uniform nucleation density followed by finer nanocrystalline grains with high Gd content.

• 出版日期2011