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摘要
The authors report the fabrication and characterization of resistance switching for a resistance random access memory with a Ti/In2O3:SiO2/Pt structure. It was found that the device exhibited bipolar resistance switching behavior over one hundred switching cycles and showed stable retention characteristics for over 10(4) s under 100 mV stress condition. The asymmetric phenomenon of the carrier conduction mechanism at high resistance state was also explored by fitting the current-voltage (I-V) curves and explained by the schematic energy band diagram. It was also found that the switching behavior is due to the migration of oxygen ions and the formation of SiO2 with higher quality at the interface of top electrode and insulator.
- 出版日期2014-3
- 单位福州大学
