New implementation of high linear LNA using derivative superposition method

作者：Han Shuguang; Chi Baoyong^*; Wang Zhihua

来源：Microelectronics Journal, 2009, 40(1): 197-201.

DOI：10.1016/j.mejo.2008.09.007

• Low-noise amplifier (LNA)
• RF
• CMOs
• Inter-modulation distortion
• Derivative superposition (DS)
• Third-order input intercept point (IIP3)

New implementation of a high linear low-noise amplifier (LNA) using the improved derivative superposition (DS) method is proposed. The input stage is formed by two transistors connected in parallel. One transistor is biased in the strong inversion region as usual and another one is biased in the moderate inversion region instead of the weak inversion region, thus allowing a feasible source degeneration inductance at the sources of the two transistors to achieve a good input impedance matching and low noise figure (NF) while keeping high third-order input intercept point (IIP3) improvement with the DS method. The new implementation has been used in a 0.18-mu m CMOS high linear LNA.The Measured results show that the LNA achieves 11.92 dBm IIP3 with 9.36 dB gain, 2.25 dB NF and 7.5 mA at 1.8 V power consumption.

• 出版日期2009-1
• 单位清华大学