Axial p-n Junctions Realized in Silicon Nanowires by Ion Implantation

作者：Hoffmann S; Bauer J; Ronning C; Stelzner Th; Michler J; Ballif C; Sivakov V; Christiansen S H^*

来源：Nano Letters, 2009, 9(4): 1341-1344.

DOI：10.1021/nl802977m

The electrical properties of vertically aligned silicon nanowires doped by ion implantation are studied in this paper by a combination of electron beam-induced current imaging and two terminal current-voltage measurements. By varying the implantation parameters in several process steps, uniform p- and n-doping profiles as well as p-n junctions along the nanowire axis are realized. The effective doping is demonstrated by electron beam-induced current imaging on single nanowires, and current-voltage measurements show their well-defined rectifying behavior.

• 出版日期2009-4