Microtron Irradiation Induced Tuning of Band Gap and Photoresponse of Al-ZnO Thin Films Synthesized by mSILAR

作者：Thomas Deepu^*; Augustine Simon; Sadasivuni Kishor Kumar; Ponnamma Deepalekshmi; Alhaddad Ahmad Yaser; Cabibihan John John; Vijayalakshmi K A

来源：Journal of Electronic Materials, 2016, 45(10): 4847-4853.

DOI：10.1007/s11664-016-4673-4

• mSILAR
• doping
• photoconductivity
• band gap
• solar cell

Al-doped polycrystalline nano ZnO (Al-ZnO) thin films with different doping concentrations were successfully prepared by the microwave-assisted successive ionic layer adsorption and reaction (mSILAR) technique. The structural analysis along with the orientation of the prepared films was examined by powder x-ray diffraction (PXRD) patterns. The deposited film is polycrystalline and the (002) orientation enhanced upon doping. Additional investigations were carried out to study the effect of electron beam irradiation (e(-)-irradiation) on the band gap and photoconductivity of both irradiated and unirradiated samples. Both the Al doping and e(-)-irradiation led to the enhancement of the photoconductivity of prepared materials. This property enables us to tune the properties of materials for various applications by controlling dopant concentrations and e(-)-irradiation. The dependence of photocurrent on e(-)-irradiation of Al-ZnO thin films was not reported previously. Therefore, Al-doped polycrystalline nano-ZnO thin film is a promising material for band gap engineering and for the development of solar cells.

• 出版日期2016-10